sa5204a, Ham- CB Radio, Karty katalogowe
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INTEGRATED CIRCUITS SA5204A Wide-band high-frequency amplifier Product specification Replaces data of Feb 25, 1992 1997 Nov 07 IC17 Data Handbook Philips Semiconductors Philips Semiconductors Product specification Wide-band high-frequency amplifier SA5204A DESCRIPTION The SA5204A family of wideband amplifiers replaces the SA5204 family. The ‘A’ parts are fabricated on a rugged 2 m m bipolar process featuring excellent statistical process control. Electrical performance is nomically identical to the original parts. The SA5204A is a high-frequency amplifier with a fixed insertion gain of 20dB. The gain is flat to PIN CONFIGURATION D Packages V CC V IN GND 1 8 7 V CC V OUT GND 2 20dB 0.5dB from DC to 200MHz. The -3dB bandwidth is greater than 350MHz. This performance makes the amplifier ideal for cable TV applications. The SA5204A operates with a single supply of 6V, and only draws 25mA of supply current, which is much less than comparable hybrid parts. The noise figure is 4.8dB in a 75 W system and 6dB in a 50 W system. The SA5204A is a relaxed version of the SA5205. Minimum guaranteed bandwidth is relaxed to 350MHz and the “S” parameter Min/Max limits are specified as typicals only. Until now, most RF or high-frequency designers had to settle for discrete or hybrid solutions to their amplification problems. Most of these solutions required trade-offs that the designer had to accept in order to use high-frequency gain stages. These include high power consumption, large component count, transformers, large packages with heat sinks, and high part cost. The SA5204A solves these problems by incorporating a wideband amplifier on a single monolithic chip. The part is well matched to 50 or 75 ± 3 6 GND 4 5 GND TOP VIEW SR00193 Figure 1. Pin Configuration FEATURES • Bandwidth (min.) 200 MHz, 0.5dB 350 MHz, -3dB ± • 20dB insertion gain • 4.8dB (6dB) noise figure Z O =75 W (Z O =50 W ) • No external components required input and output impedances. The standing wave ratios in 50 and 75 W • Input and output impedances matched to 50/75 W systems systems do not exceed 1.5 on either the input or output over the entire DC to 350MHz operating range. Since the part is a small, monolithic IC die, problems such as stray capacitance are minimized. The die size is small enough to fit into a very cost-effective 8-pin small-outline (SO) package to further reduce parasitic effects. No external components are needed other than AC-coupling capacitors because the SA5204A is internally compensated and matched to 50 and 75 W . The amplifier has very good distortion specifications, with second and third-order intermodulation intercepts of +24dBm and +17dBm, respectively, at 100MHz. The part is well matched for 50 W • Surface-mount package available • Cascadable • 2000V ESD protection APPLICATIONS • Antenna amplifiers • Amplified splitters • Signal generators • Frequency counters test equipment such as signal generators, oscilloscopes, frequency counters, and all kinds of signal analyzers. Other applications at 50 W • Oscilloscopes include mobile radio, CB radio, and data/video transmission in fiber optics, as well as broadband LANs and telecom systems. A gain greater than 20dB can be achieved by cascading additional SA5204As in series as required, without any degradation in amplifier stability. W • Signal analyzers • Broadband LANs • Networks • Modems • Mobile radio • Security systems • Telecommunications ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 8-Pin Plastic Small Outline (SO) package –40 to +85 ° C SA5204AD SOT96-1 2 853-1599 18662 Philips Semiconductors Product specification Wide-band high-frequency amplifier SA5204A ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT V CC Supply voltage 9 V V IN AC input voltage 5 V P–P T A Operating ambient temperature range SA grade –40 to +85 ° C P DMAX Maximum power dissipation 1, 2 T A =25 ° 780 mW T J Junction temperature 150 ° C T STG Storage temperature range –55 to +150 ° C T SOLD Lead temperature (soldering 60s) 300 ° C NOTES: 1. Derate above 25 ° C, at the following rates D package at 6.2mW/ ° C 2. See “Power Dissipation Considerations” section. EQUIVALENT SCHEMATIC V CC R 1 R 2 R 0 Q 3 V OUT Q 6 Q 2 V IN Q 1 Q 4 R 3 R F1 R E2 R E1 Q 5 R F2 SR00194 Figure 2. Equivalent Schematic 1997 Nov 07 3 C(still–air) D package Philips Semiconductors Product specification Wide-band high-frequency amplifier SA5204A DC ELECTRICAL CHARACTERISTICS V CC =6V, Z S =Z L =Z O =50 W and T A =25 ° C , in all packages, unless otherwise specified. LIMITS SYMBOL PARAMETER TEST CONDITIONS UNIT SYMBOL PARAMETER UNIT Min Typ Max V CC Operating supply voltage range Over temperature 5 8 V I CC Supply current Over temperature 19 25 33 mA S21 Insertion gain f=100MHz, over temperature 16 19 22 dB f=100MHz 25 S11 Input return loss dB S11 dB DC –550MHz 12 f=100MHz 27 S22 Output return loss dB S22 dB DC –550MHz 12 f=100MHz –25 S12 Isolation dB S12 Isolation dB DC –550MHz –18 BW Bandwidth ± 0.5dB 200 350 MHz BW Bandwidth –3dB 350 550 MHz Noise figure (75 W ) f=100MHz 4.8 dB Noise figure (50 W ) f=100MHz 6.0 dB Saturated output power f=100MHz +7.0 dBm 1dB gain compression f=100MHz +4.0 dBm Third–order intermodulation inter- cept (output) f=100MHz +17 dBm Second–order intermodulation inter- cept (output) f=100MHz +24 dBm t R Rise time 500 ps t P Propagation delay 500 ps 35 34 32 30 28 26 24 22 20 18 16 9 8 v cc = 8v v cc = 7v Z O = 50 W T A = 25 o C T A = 25 o C 7 v cc = 6v v cc = 5v 6 5 5 5.5 6 6.5 7 7.5 8 10 12 468 10 2 2 468 10 3 SR00196 SUPPLY VOLTAGE—V SR00195 FREQUENCY—MHz Figure 3. Supply Current vs Supply Voltage Figure 4. Noise Figure vs Frequency 1997 Nov 07 4 TEST CONDITIONS Input return loss Output return loss Philips Semiconductors Product specification Wide-band high-frequency amplifier SA5204A 25 10 9 8 7 6 5 4 3 2 1 0 –1 –2 –3 –4 –5 –6 v cc = 8v v cc = 7v V CC = 8V 20 V C C = 6V V CC = 5V V CC = 7V v cc = 6v 15 v cc = 5v W T A = 25 o C W T A = 25 o C 10 10 12 468 10 2 2 468 10 3 10 12 468 10 2 2 468 10 3 FREQUENCY—MHz FREQUENCY—MHz SR00197 SR00198 Figure 8. 1dB Gain Compression vs Frequency Figure 5. Insertion Gain vs Frequency (S 21 ) 25 40 T A = 55 o C T A = 25 o C 35 20 30 25 15 T A = 85 o C T A = 125 o C 20 W T A = 25 o C V CC = 8V Z O = 50 15 W 10 10 10 12 468 10 2 2 468 10 3 4 5 6 7 8 9 10 FREQUENCY—MHz POWER SUPPLY VOLTAGE—V SR00199 SR00200 Figure 9. Second-Order Output Intercept vs Supply Voltage Figure 6. Insertion Gain vs Frequency (S 21 ) 10 30 9 8 7 25 6 5 4 20 3 V CC = 7V V CC = 6V V CC = 5V 2 1 0 –1 –2 –3 –4 –5 –6 V CC = 8V 15 Z O = 50 W T A = 25 o C 10 Z O = 50 W T A = 25 o C 5 4 5 6 7 8 9 10 10 1 2 4 6 8 10 2 2 4 6 8 10 3 POWER SUPPLY VOLTAGE—V FREQUENCY—MHz SR00201 Figure 7. Saturated Output Power vs Frequency SR00202 Figure 10. Third-Order Intercept vs Supply Voltage 1997 Nov 07 5 Z O = 50 Z O = 50 Z O = 50 11 [ Pobierz całość w formacie PDF ] |