S8550

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UTC S8550
PNP EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP
TRANSISTOR
DESCRIPTION
The UTC S8550 is a low voltage high current small
signal PNP transistor, designed for Class B push-pull
audio amplifier and general purpose applications.
1
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to UTC S8050
TO-92
1:EMITTER 2:BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25
°
C ,unless otherwise specified )
PARAMETERS
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Dissipation(Ta=25
°
C
)
Pc
1
W
Collector Current
Ic
-700
mA
Junction Temperature
T
j
150
°
C
Storage Temperature
T
STG
-65 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C,unless otherwise specified)
PARAMETER
SYMBOL
TESTCONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BV
CBO
Ic=-100
µ
A,I
E
=0
-30
V
Collector-Emitter Breakdown Voltage BV
CEO
Ic=-1mA,I
B
=0
-20
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=-100
µ
A,Ic=0
-5
V
Collector Cut-Off Current
I
CBO
V
CB
=-30V,I
E
=0
-1
µ
A
Emitter Cut-Off Current
I
EBO
V
EB
=-5V,Ic=0
-100
nA
DC Current Gain(note)
hFE
1
hFE2
hFE3
V
CE
=-1V,Ic=-1mA
V
CE
=-1V,Ic=-150 mA
V
CE
=-1V,Ic=-500mA
100
120
40
110
400
Collector-Emitter Saturation Voltage V
CE
(sat)
Ic=-500mA,I
B
=-50mA
-0.5
V
Base-Emitter Saturation Voltage
V
BE
(sat)
Ic=500mA,I
B
=-50mA
-1.2
V
Base-Emitter Saturation Voltage
V
BE
V
CE
=-1V,Ic=-10mA
-1.0
V
Current Gain Bandwidth Product
f
T
V
CE
=-10V,Ic=-50mA
100
MHz
Output Capacitance
Cob
V
CB
=10V,I
E
=0
f=1MHz
9.0
pF
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-014,A
UTC S8550
PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Fig.2 DC current Gain
Fig.3 Base-Emitter on Voltage
0.5
I
B
=3.0mA
10
3
10
2
I
B
=2.5mA
V
CE
=1V
V
CE
=1V
0.4
I
B
=2.0mA
10
2
10
1
0.3
I
B
=1.5mA
0.2
I
B
=1.0mA
10
1
10
0
0.1
I
B
=0.5mA
0
10
0
10
-1
0
0.4
0.8
1.2
1.6
2.0
10
-1
10
0
10
1
10
2
10
3
0
0.2
0.4
0.6
0.8
1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
10
4
10
3
10
3
Ic=10*I
B
V
CE
=10V
10
3
V
BE
(sat)
10
2
10
2
f=1MHz
I
E
=0
10
2
10
1
10
1
V
CE
(sat)
10
1
10
0
10
0
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R201-014,A
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