S8050

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UTC S8050
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The UTC S8050 is a low voltage high current small
signal NPN transistor, designed for Class B push-pull
audio amplifier and general purpose applications.
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to S8550
1
TO-92
1:EMITTER 2:BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°
C, unless otherwise specified )
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Collector Dissipation(Ta=25
°
C)
Pc
1
W
Collector Current
Ic
700
mA
Junction Temperature
T
j
150
°
C
Storage Temperature
T
STG
-65 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BV
CBO
Ic=100
µ
A,I
E
=0
30
V
Collector-Emitter Breakdown Voltage
BV
CEO
Ic=1mA,I
B
=0
20
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=100
µ
A,Ic=0
5
V
Collector Cut-Off Current
I
CBO
V
CB
=30V,I
E
=0
1
µ
A
Emitter Cut-Off Current
I
EBO
V
EB
=5V,Ic=0
100
nA
DC Current Gain(note)
hFE
1
hFE2
hFE3
V
CE
=1V,Ic=1mA
V
CE
=1V,Ic=150 mA
V
CE
=1V,Ic=500mA
100
120
40
110
400
Collector-Emitter Saturation Voltage
V
CE
(sat)
Ic=500mA,I
B
=50mA
0.5
V
Base-Emitter Saturation Voltage
V
BE
(sat)
Ic=500mA,I
B
=50mA
1.2
V
Base-Emitter Saturation Voltage
V
BE
V
CE
=1V,Ic=10mA
1.0
V
Current Gain Bandwidth Product
f
T
V
CE
=10V,Ic=50mA
100
MHz
Output Capacitance
Cob
V
CB
=10V,I
E
=0
f=1MHz
9.0
pF
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-013,A
 UTC S8050
NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Fig.2 DC current Gain
Fig.3 Base-Emitter on Voltage
0.5
10
3
10
2
I
B
=3.0mA
V
CE
=1V
I
B
=2.5mA
V
CE
=1V
0.4
I
B
=2.0mA
10
1
10
2
0.3
I
B
=1.5mA
0.2
I
B
=1.0mA
10
1
10
0
I
B
=0.5mA
0.1
10
0
10
-1
0
0
0.4
0.8
1.2
1.6
2.0
10
-1
10
0
10
1
10
2
10
3
0
0.2
0.4
0.6
0.8
1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
Fig.4 Saturation voltage
10
4
10
3
10
3
Ic=10*I
B
V
CE
=10V
V
BE
(sat)
f=1MHz
I
E
=0
10
3
10
2
10
2
10
2
10
1
10
1
V
CE
(sat)
10
1
10
0
10
0
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R201-013,A
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