rurg80xx

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RURG8060
Data Sheet
January 2000
File Number
3388.3
80A, 600V Ultrafast Diode
The RURG8060 is an ultrafast diode with soft recovery
characteristics (t
rr
< 75ns). It has low forward voltage drop
and is of silicon nitride passivated ion-implanted epitaxial
planar construction.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <75ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and ultrafast recovery with soft recovery characteristic
minimize ringing and electrical noise in many power
switching circuits, thus reducing power loss in the switching
transistors.
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
Formerly developmental type TA09886.
• General Purpose
Ordering Information
Packaging
PART NUMBER
PACKAGE
BRAND
JEDEC STYLE 2 LEAD TO-247
RURG8060
TO-247
RURG8060
ANODE
NOTE: When ordering, use the entire part number.
CATHODE
(BOTTOM
CATHODE
Symbol
SIDE METAL)
K
A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURG8060
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
600
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
600
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
600
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 72
o
C)
80
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
160
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
800
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
180
W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
50
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
-65 to 175
o
C
1
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Copyright
©
Intersil Corporation 2000
RURG8060
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 80A
-
-
1.6
V
I
F
= 80A, T
C
= 150
o
C
-
-
1.4
V
I
R
V
R
= 600V
-
-
250
A
V
R
= 600V, T
C
= 150
o
C
-
-
2.0
mA
t
rr
I
F
= 1A, dI
F
/dt = 100A/
µ
s
-
-
75
ns
I
F
= 80A, dI
F
/dt = 100A/
µ
s
-
-
85
ns
t
a
I
F
= 80A, dI
F
/dt = 100A/
µ
s
-
40
-
ns
t
b
I
F
= 80A, dI
F
/dt = 100A/
µ
s
-
25
-
ns
R
JC
-
-
0.83
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 6), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
θ
JC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
400
1000
175
o
C
175
o
C
100
100
100
o
C
10
100
o
C
10
25
o
C
1
0.1
25
o
C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
0.01
0
100
200
300
400
500
600
V
F
, FORWARD VOLTAGE (V)
V
F
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RURG8060
Typical Performance Curves
(Continued)
80
100
60
80
DC
t
rr
60
40
SQ. WAVE
t
a
40
20
t
b
20
0
1
10
80
0
25
50
75
100
125
150
175
I
F
, FORWARD CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. t
rr
,t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
L
t
1 AND
t
2
CONTROL I
F
DUT
CURRENT
SENSE
dI
F
t
rr
R
G
I
F
dt
+
t
a
t
b
V
GE
V
DD
0
-
t
1
IGBT
0.25 I
RM
t
2
I
RM
FIGURE 5. t
rr
TEST CIRCUIT
FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
I = 1.6A
L = 40mH
R < 0.1
Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
V
AVL
L
R
CURRENT
SENSE
+
I
L
I
L
V
DD
Q
1
IV
V
DD
DUT
-
t
0
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
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